vishay siliconix si1012r/x document number: 71166 s-81543-rev. c, 07-jul-08 www.vishay.com 1 n-channel 1.8-v (g-s) mosfet features ? halogen-free option available ? trenchfet ? power mosfet: 1.8 v rated ? gate-source esd protected: 2000 v ? high-side switching ? low on-resistance: 0.7 ? low threshold: 0.8 v (typ.) ? fast switching speed: 10 ns applications ? drivers: relays, solenoids, lamps, hammers, displays, memories ? battery oper ated systems ? power supply converter circuits ? load/power switching cell phones, pagers benefits ? ease in driving switches ? low offset (error) voltage ? low-voltage operation ? high-speed circuits ? low battery voltage operation product summary v ds (v) r ds(on) ( )i d (ma) 20 0.70 at v gs = 4.5 v 600 0.85 at v gs = 2.5 v 500 1.25 at v gs = 1.8 v 350 top v ie w 2 1 s d g 3 sc-75a or sc- 8 9 notes: a. pulse width limited by ma ximum junction temperature. b. surface mounted on fr4 board. ordering information part number package marking code SI1012R-T1-E3 (lead (pb)-free) si1012r-t1-ge3 (lead (pb)-free and halogen-free) sc-75a (sot-416) c si1012x-t1-e3 (lead (pb)-free) si1012x-t1-ge3 (lead (pb)-free and halogen-free) sc-89 (sot-490) a absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol 5 s steady state unit drain-source voltage v ds 20 v gate-source voltage v gs 6 continuous drain current (t j = 150 c) b t a = 25 c i d 600 500 ma t a = 85 c 400 350 pulsed drain current a i dm 1000 continuous source current (diode conduction) b i s 275 250 maximum power dissipation b for sc-75 t a = 25 c p d 175 150 mw t a = 85 c 90 80 maximum power dissipation b for sc-89 t a = 25 c 275 250 t a = 85 c 160 140 operating junction and storage temperature range t j , t stg - 55 to 150 c gate-source esd rating (hbm, method 3015) esd 2000 v rohs compliant
www.vishay.com 2 document number: 71166 s-81543-rev. c, 07-jul-08 vishay siliconix si1012r/x notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t a = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.45 0.9 v gate-body leakage i gss v ds = 0 v, v gs = 4.5 v 0.5 1.0 a zero gate voltage drain current i dss v ds = 20 v, v gs = 0 v 0.3 100 na v ds = 20 v, v gs = 0 v, t j = 85 c 5a on-state drain current a i d(on) v ds = 5 v, v gs = 4.5 v 700 ma drain-source on-state resistance a r ds(on) v gs = 4.5 v, i d = 600 ma 0.41 0.70 v gs = 2.5 v, i d = 500 ma 0.53 0.85 v gs = 1.8 v, i d = 350 ma 0.70 1.25 forward transconductance a g fs v ds = 10 v, i d = 400 ma 1.0 s diode forward voltage a v sd i s = 150 ma, v gs = 0 v 0.8 1.2 v dynamic b total gate charge q g v ds = 10 v, v gs = 4.5 v, i d = 250 ma 750 pc gate-source charge q gs 75 gate-drain charge q gd 225 tu r n - o n d e l ay t i m e t d(on) v dd = 10 v, r l = 47 i d ? 200 ma, v gen = 4.5 v, r g = 10 5 ns rise time t r 5 turn-off delay time t d(off) 25 fall time t f 11
document number: 71166 s-81543-rev. c, 07-jul-08 www.vishay.com 3 vishay siliconix si1012r/x typical characteristics t a = 25 c, unless otherwise noted output characteristics on-resistance vs. drain current gate charge 0.0 0.2 0.4 0.6 0. 8 1.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v gs = 5 thr u 1. 8 v v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 1 v - on-resistance ( ) r ds(on) 0.0 0. 8 1.6 2.4 3.2 4.0 0 200 400 600 8 00 1000 i d - drain c u rrent (ma) v gs = 1. 8 v v gs = 4.5 v v gs = 2.5 v 0 1 2 3 4 5 0.0 0.2 0.4 0.6 0. 8 v ds = 10 v i d = 250 ma - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs transfer characteristics capacitance on-resistance vs. junction temperature 0 200 400 600 8 00 1000 1200 0.0 0.5 1.0 1.5 2.0 2.5 125 c 25 c v gs - gate-to-so u rce v oltage ( v ) i d - drain c u rrent (ma) t c = - 55 c 0 20 40 60 8 0 100 04 8 12 16 20 v ds - drain-to-so u rce v oltage ( v ) c rss c oss c iss c - capacitance (pf) r ds(on) - on-resistance ( n ormalized) 0.60 0. 8 0 1.00 1.20 1.40 1.60 - 50 - 25 0 25 50 75 100 125 v gs = 4.5 v i d = 600 ma t j - j u nction temperat u re (c) v gs = 1. 8 v i d = 350 ma
www.vishay.com 4 document number: 71166 s-81543-rev. c, 07-jul-08 vishay siliconix si1012r/x typical characteristics t a = 25 c, unless otherwise noted source-drain diode forward voltage threshold voltage variance vs. temperature 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 1000 1 v sd - so u rce-to-drain v oltage ( v ) - so u rce c u rrent (ma) i s t j = 125 c t j = 25 c 10 100 t j = - 55 c - 0.3 - 0.2 - 0.1 0 0.1 0.2 0.3 - 50 - 25 0 25 50 75 100 125 i d = 0.25 ma v ariance ( v ) v gs(th) t j - temperat u re (c) on-resistance vs. gate-to-source voltage i gss vs. temperature 0 1 2 3 4 5 0123456 i d = 350 ma - on-resistance ( ) r ds(on) v gs - gate-to-so u rce v oltage ( v ) i d = 200 ma 0.0 0.5 1.0 1.5 2.0 2.5 3.0 - 50 - 25 0 25 50 75 100 125 t j - temperat u re (c) i gss - ( a) v gs = 4.5 v bv gss vs. temperature 0 1 2 3 4 5 6 7 - 50 - 25 0 25 50 75 100 125 t j - temperat u re (c) b v gss - gate-to-so u rce breakdo w n v oltage ( v )
vishay semiconductors si1012r/x document number: 71166 s-81543-rev. c, 07-jul-08 www.vishay.com 5 typical characteristics t a = 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71166 . normalized thermal transient impedance, junction-to-ambient (sc-75a) 10 -3 10 -2 0 0 6 0 1 1 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0.5 sq u are w a v e p u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1. d u ty cycle, d = 2. per unit base = r thja = 8 33 c/ w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 n otes: 4. s u rface mo u nted p d m normalized thermal transient impedance, junction-to-foot 10 -3 10 -2 0 1 1 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0.5 sq u are w a v e p u lse d u ration (s) n ormalized effecti v e transient thermal impedanc e
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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